TITLE

Monolithic integration of normally-on and normally-off asymmetric Fabry-Perot modulators by

AUTHOR(S)
Goossen, K.W.; Cunningham, J.E.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p2966
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the asymmetric Fabry-Perot quantum-well modulators. Effect of the overbalance of modulators at zero bias on the reflectivity; Correlation between the optical cavity balance and the decrease in quantum-well absorption; Integration of normally-on and normally-off high contrast modulators by selective antireflection coating.
ACCESSION #
4241251

 

Related Articles

  • Optically addressed asymmetric Fabry-Perot modulator. Larsson, A.; Maserjian, J. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3099 

    Details the construction of a modulator operating in a reflection mode. Insertion of a multiple quantum well structure in an asymmetric Fabry-Perot resonator; Measurement of the contrast ratio; Determination of the insertion loss.

  • Normally-on GaAs/AlAs multiple-quantum-well Fabry-Perot reflection modulators for large.... Chih-Hsiang Lin; Goossen, K.W. // Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1242 

    Investigates the performance characteristics of multiple-quantum-well Fabry-Perot reflection modulators. Analysis on the reflectance changes and contrast ratios of fabricated modulators with various diameters; Achievement of high performance characteristics by scanning across the wafer;...

  • Al[sub x]Ga[sub 1-x]As-AlAs quantum well surface-normal electroabsorption modulators operating.... Goossen, K.W.; Yan, R.H.; Cunningham, J.E.; Jan, W.Y. // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1829 

    Evaluates Al[sub x]Ga[sub 1-x]As-aluminum arsenide quantum well surface-normal electroabsorption modulators. Operation of modulators at visible wavelengths; Advantage of modulators over lasers; Measurement of relative transmission changes.

  • Self-consistent calculation of the modulation response for quantum well laser diodes. Grupen, Matt; Hess, Karl // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2454 

    Presents the modulation responses for a set of strained-layer InGaAs quantum well lasers as calculated by a version of minilase. Association of gain saturation and low frequency rolloff with carrier capture in the quantum well; Influence of the capture rates on the modulation response.

  • Normally on GaAs/AlAs multiple-quantum well Fabry-Perot transmission modulator with ON/OFF.... Chih-Hsiang Lin; Goossen, K.W. // Applied Physics Letters;3/6/1995, Vol. 66 Issue 10, p1222 

    Investigates a multiple-quantum well Fabry-Perot (FP MQW) transmission modulator. Changes of the ON/OFF transmittance in transmission modulators; Comparison between transmittance charges of several transmission modulators; Derivation of the FP resonant wavelength transmittance from FP...

  • Infrared electro-optical modulators based on field-induced...-L intervalley transfer. Meyer, J.R.; Hoffman, C.A. // Applied Physics Letters;11/6/1995, Vol. 67 Issue 19, p2756 

    Examines the electro-optical modulators based on intersubband transitions induced by normal incidence radiation in GaSb-AlSb-family asymmetric double quantum wells. Discussion on the electro-optical modulator; Effectiveness of the applied field; Alteration of the selection rules, resonance...

  • Multiquantum well structure with an average electron mobility of 4.0x10[sup 6] cm[sup 2]/V s. Pfeiffer, L.N.; West, K.W. // Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1211 

    Presents a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Measurement of the low field mobility of each well; Charge distribution of the carriers in each well; Reduction of the remote ionized scattering from the...

  • Measurement of modulation saturation intensity in strain-balanced, undefected InGaAs/GaAsP.... Goossen, K.W.; Cunningham, J.E.; Santos, M.B.; Jan, W.Y. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p515 

    Measures the modulation saturation intensity in strained-balanced indium gallium arsenide/gallium arsenide phosphide (InGaAs/GaAsP) multiple quantum well (MQW) modulators. Comparison with strain-relaxed system in terms of exciton and modulation; Growth of sample by gas-source molecular beam...

  • Theoretical and experimental analysis of Mach–Zehnder quantum-well modulators. Bardyszewski, Witold; Yevick, David; Liu, Yong; Rolland, Claude; Bradshaw, Scott // Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1136 

    Presents a theoretical and experimental analysis of Mach-Zehnder quantum-well modulators. Description of the theoretical model; Experimental procedures; Theoretical and experimental results.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics