Raman scattering from H or O terminated porous Si

Tsang, J.C.; Tischler, M.A.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2279
Academic Journal
Examines the dependence of the crystalline structure of porous silicon on the bonding of surface silicon atoms to either hydrogen or oxygen by Raman spectroscopy. Identification of the character of terminated porous silicon; Influence of the bonding of silicon atom by oxygen on the surfaces of silicon particles; Effect of passivation by hydrogen atoms on silicon atoms.


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