Enhancement of photoluminescence intensity in InGaAs/Al[sub x]Ga[sub 1-x]As quantum wells by

Lord, S.M.; Roos, G.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2276
Academic Journal
Examines the effect of diffusion of monatomic hydrogen on photoluminescence in the indium gallium arsenide (GaAs)/aluminium GaAs system. Influence of molecular beam epitaxy on the growth of quantum wells; Use of deep level transient spectroscopy; Factors affecting the enhancement of photoluminescence efficiency.


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