TITLE

Dc current-voltage characteristics of a double-quantum-well field-effect resonant tunneling

AUTHOR(S)
Chen, J.G.; Yang, C.H.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2273
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the design and characteristics of a double quantum well (DQW) field effect resonant tunneling transistor. Observation of the current-voltage characteristics in gate tunneling current; Depletion of the quantum well close to the surface; Derivation of the peak-to-valley ratio; Similarity of the structure between DQW and tunneling transfer field-effect transistor.
ACCESSION #
4241234

 

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