TITLE

Reduction of transient boron diffusion in preamorphized Si by carbon implantation

AUTHOR(S)
Nishikawa, Satoshi; Tanaka, Akira
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2270
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the boron diffusion in preamorphized silicon as a function of dose carbon ion implantation. Occurrence of transient enhanced diffusion in the preamorphized depth region; Effect of C[sup +] implantation on the defect of amorphous/crystal interface; Discussion of the mechanism of eliminating transient diffusion.
ACCESSION #
4241233

 

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