Lateral straggle of focused-ion-beam implanted Be in GaAs

Vignaud, D.; Etchin, S.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2267
Academic Journal
Examines the lateral distribution of focused ion beam implanted beryllium atoms in gallium arsenide. Measurement of the electrical resistivity in grating structure; Attribution of quantum wells growth at various depths to channeling; Factor influencing the occurrence of lateral straggle; Use of th Monte Carlo simulations.


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