TITLE

Lateral straggle of focused-ion-beam implanted Be in GaAs

AUTHOR(S)
Vignaud, D.; Etchin, S.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2267
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the lateral distribution of focused ion beam implanted beryllium atoms in gallium arsenide. Measurement of the electrical resistivity in grating structure; Attribution of quantum wells growth at various depths to channeling; Factor influencing the occurrence of lateral straggle; Use of th Monte Carlo simulations.
ACCESSION #
4241232

 

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