Intersubband absorption in Sb delta-doped Si/Si[sub 1-x]Ge[sub x] quantum well structures

Chanho Lee; Wang, K.L.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2264
Academic Journal
Examines the normal incident electron intersubband absorption in Si[sub 1-x]Ge[sub x]/Si quantum wells grown on (110) silicon substrates. Factor affecting the intersubband absorption; Observation of different ranges of absorption peaks; Influence of germanium composition and doping concentration on energy transition.


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