TITLE

Evaluation of the 3-level charge pumping technique for characterizing interface traps

AUTHOR(S)
Saks, N.S.; Ancona, M.G.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2261
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interface trap electron and hole emission cross sections in metal oxide semiconductor. Comparison of the interface trap parameters obtained by three-level charge pumping; Use of the three-level charge pumping as a tool for characterizing interface traps; Agreement between three-level charge pumping technique with the standard admittance techniques.
ACCESSION #
4241230

 

Related Articles

  • Kinetics of ion depolarization of Si—MOS structures in the linear voltage sweep regime. Zhdan, A. G.; Goldman, E. I.; Chucheva, G. V. // Semiconductors;Dec97, Vol. 31 Issue 12, p1268 

    A new approach is developed to describe isothermal ion depolarization of Si-MOS structures in the regime of linear variation of the gate electrode potential V[sub g]. The approach is based on the experimentally proven fact of the substantially nonequilibrium nature of ion transport in such...

  • Electrostatic ultra-low-energy antiproton recycling ring. Siggel-King, M.; Papash, A.; Knudsen, H.; Holzscheiter, M.; Welsch, C. // Hyperfine Interactions;2011, Vol. 199 Issue 1-3, p311 

    There is a strong need to push forward developments in the storage and control of ultra-low-energy antiproton beams to enable important scientific research. To this end, a small electrostatic ring, and associated electrostatic acceleration section, is being designed and developed by the QUASAR...

  • Photoionizing trapped highly charged ions with synchrotron radiation. Crespo López-Urrutia, J. R.; Simon, M. C.; Beilmann, C.; Rudolph, J.; Steinbrügge, R.; Eberle, S.; Schwarz, M.; Baumann, T. M.; Schmitt, B. L.; Brunner, F.; Ginzel, R.; Klawitter, R.; Kubicek, K.; Epp, S. W.; Mokler, P. H.; Mäckel, V.; Ullrich, J.; Brown, G. V.; Graf, A.; Leutenegger, M. // AIP Conference Proceedings;5/25/2012, Vol. 1438 Issue 1, p80 

    We review our recent high resolution experiments on photoabsorption by Fe14+ [M. C. Simon, et al., Phys. Rev. Lett. 105, 183001 (2010)], Fe15+, and Ar12+ [M. C. Simon, et al., J. Phys. B-At. Mol. Opt. Phys. 43, 065003 (2010)] at photon energies up to 1 keV. These ions play an essential role in...

  • Photodissociation spectroscopy of the dysprosium monochloride molecular ion. Dunning, Alexander; Petrov, Alexander; Schowalter, Steven J.; Puri, Prateek; Kotochigova, Svetlana; Hudson, Eric R. // Journal of Chemical Physics;2015, Vol. 143 Issue 12, p1 

    We have performed a combined experimental and theoretical study of the photodissociation cross section of the molecular ion DyCl+. The photodissociation cross section for the photon energy range 35 500 cm-1 to 47 500 cm-1 is measured using an integrated ion trap and time-of-flight mass...

  • Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis. Yeonghun Lee; Kakushima, Kuniyuki; Natori, Kenji; Iwai, Hiroshi // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113712 

    We investigated the phonon-limited electron mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors (Si NW MOSFETs) using the Kubo-Greenwood formula. Although cross-sectional electrostatics has been actively investigated, the cross-sectional distribution of...

  • Strain relaxation in Si/Ge/Si nanoscale bars from molecular dynamics simulations. Park, Yumi; Atkulga, Hasan Metin; Grama, Ananth; Strachan, Alejandro // Journal of Applied Physics;Aug2009, Vol. 106 Issue 3, p034304 

    We use molecular dynamics (MD) with the reactive interatomic potential ReaxFF to characterize the local strains of epitaxial Si/Ge/Si nanoscale bars as a function of their width and height. While the longitudinal strain (along the bars length) is independent of geometry, surface relaxation leads...

  • Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation. Andreev, B.; Krasilnik, Z.; Kryzhkov, D.; Kuznetsov, V.; Yablonskiy, A. // Semiconductors;Nov2012, Vol. 46 Issue 11, p1372 

    Dependences of the erbium photoluminescence intensity in Si:Er/Si structures have been studied in cases of homogeneous (over the sample surface) and inhomogeneous optical excitation. It is shown that the excitation mode strongly affects the type of the dependences obtained. A method for...

  • Excitation cross section of erbium-doped GaN waveguides under 980nm optical pumping. Hui, R.; Xie, R.; Feng, I.-W.; Sun, Z. Y.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;8/4/2014, Vol. 105 Issue 5, p1 

    Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2 × 10-21cm² at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these...

  • Electron-impact excitation cross-section measurements at EBITs from 1986 to 2006. Hui Chen; Beiersdorfer, Peter // Canadian Journal of Physics;Jan2008, Vol. 86 Issue 1, p55 

    This paper reviews the electron-impact excitation (EIE) measurements at electron beam ion trap (EBIT) facilities in the last 20~years. EIE cross sections are important atomic parameters fundamental to understanding the spectroscopic properties of ions. The properties of an EBIT make it an ideal...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics