Evaluation of the 3-level charge pumping technique for characterizing interface traps

Saks, N.S.; Ancona, M.G.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2261
Academic Journal
Examines the interface trap electron and hole emission cross sections in metal oxide semiconductor. Comparison of the interface trap parameters obtained by three-level charge pumping; Use of the three-level charge pumping as a tool for characterizing interface traps; Agreement between three-level charge pumping technique with the standard admittance techniques.


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