InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical

Bohrer, J.; Krost, A.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2258
Academic Journal
Examines the dependence of the interface structure in thin indium-gallium arsenide/indium phosphide quantum wells on the gas switching sequence. Observation of the transition of monolayer splitting by photoluminescence; Attribution of the transition to a phosphorus-arsenic exchange; Factor influencing the formation of InAs[sub 1-x]P[sub 1] interfacial islands.


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