TITLE

Observation of reflection high energy electron diffraction intensity oscillations during Si

AUTHOR(S)
Mokler, S.M.; Liu, W.K.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2255
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of silicon(001) during gas source molecular beam epitaxy from disilane using reflection electron diffraction intensity oscillations. Factor affecting the performance of oscillations; Observation of strong and damped oscillations under two dimensional growth regime; Dependence of silicon growth rate to higher temperatures.
ACCESSION #
4241228

 

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