TITLE

Electrochemical sulfur passivation of GaAs

AUTHOR(S)
Hou, X.Y.; Cai, W.Z.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2252
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on the development of sulfur passivation method as the anodic sulfurized technique of gallium arsenide (GaAs). Detection of the bonding of Ga and As atoms to silicon atoms; Analysis of the surface recombination velocity based on the photoluminescence spectra; Influence of passivated surface on photoassisted oxidation.
ACCESSION #
4241227

 

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