Critical thickness of highly strained InGaAs layers grown on InP by molecular beam epitaxy

Gendry, M.; Drouot, V.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2249
Academic Journal
Investigates the critical thicknesses of highly strained In[sub 82]Ga[sub 18]As epilayers grown on indium phosphide by molecular beam epitaxy. Effect of strain and temperature on growth mode and plastic relaxation mechanism; Use of reflection high energy electron diffraction techniques; Measurement of the three-dimensional growth mode and relaxation onsets.


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