TITLE

Gas source iodine n-type doping of molecular beam epitaxially grown CdTe

AUTHOR(S)
Rajavel, D.; Summers, C.J.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2231
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of highly conductive n-type cadmium telluride films through molecular beam epitaxy by iodine doping using ethyliodide. Increase of room-temperature electron concentration for dopant flow rate; Determination of the structural and optical properties by x-ray double crystal rocking curve; Identification of the electrical activity and sharp dopant profiles.
ACCESSION #
4241219

 

Related Articles

  • Metal-organic molecular-beam epitaxy of GaN with trimethylgallium and ammonia: Experiment and modeling. Gherasoiu, I.; Nikishin, S.; Temkin, H. // Journal of Applied Physics;9/1/2005, Vol. 98 Issue 5, p053518 

    Metal-organic molecular-beam epitaxy with trimethylgallium and ammonia is used to grow GaN on Si(111). Our analysis of the growth data shows an increase in the apparent formation energy Eapp of epitaxial GaN, from 0.168 to 0.56 eV, with an increasing flux of ammonia. A rate-equation-based growth...

  • Molecular Beam Epitaxy Growth of High-Quality Arsenic-Doped HgCdTe. Edwall, D.; Piquette, E.; Ellsworth, J.; Arias, J.; Swartz, C. H.; Bai, L.; Tompkins, R. P.; Giles, N. C.; Myers, T. H.; Berding, M. // Journal of Electronic Materials;Jun2004, Vol. 33 Issue 6, p752 

    We have initiated a joint effort to better elucidate the fundamental mechanisms underlying As-doping in molecular beam epitaxy (MBE)-grown HgCdTe. We have greatly increased the As incorporation rate by using an As cracker cell. With a cracker temperature of 700°C, As incorporation as high as...

  • Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy. Bhattacharyya, A.; Li, W.; Cabalu, J.; Moustakas, T. D.; Smith, David J.; Hervig, R. L. // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4956 

    In this paper we report on the mechanism of efficient incorporation of Mg in GaN films during growth by plasma-assisted molecular beam epitaxy. It is found that Mg incorporates more efficiently during growth of GaN films at high temperatures (770 °C) under extreme Ga-rich conditions. We...

  • Incorporation of the dopants Si and Be into GaAs nanowires. Hilse, M.; Ramsteiner, M.; Breuer, S.; Geelhaar, L.; Riechert, H. // Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p193104 

    We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high Be doping concentrations cause a kinking and tapering of the NWRs. We investigated local vibrational modes by means of...

  • Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density. Vignaud, D.; Yarekha, D. A.; Lampin, J. F.; Zaknoune, M.; Godey, S.; Mollot, F. // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p242104 

    The electron lifetime has been measured by time-resolved differential transmission experiments in heavily carbon-doped p-type InGaAs and GaAsSb, grown lattice matched on InP by molecular beam epitaxy. It is found inversely proportional to the square of the doping in both alloys, a result typical...

  • Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers. Yoh Mita; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu // Journal of Applied Physics;8/15/2004, Vol. 96 Issue 4, p1904 

    The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear...

  • Effect of Si codoping on Eu3+ luminescence in GaN. Wang, R.; Steckl, A. J.; Brown, E. E.; Hommerich, U.; Zavada, J. M. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    Eu and Si codoped GaN thin films were grown on sapphire by solid source molecular beam epitaxy. Eu3+ photoluminescence (PL) emission at ∼622 nm (5D0-7F2) was enhanced by approximately five to ten times with Si doping. The effect of Si codoping on PL intensity, lifetime, and excitation...

  • Properties of Silicon Layers Grown by Molecular-Beam Epitaxy. Shengurov, V. G.; Svetlov, S. P.; Chalkov, V. Yu.; Gorshenin, G. N.; Shengurov, D. V.; Denisov, S. A. // Inorganic Materials;Nov2005, Vol. 41 Issue 11, p1131 

    Silicon layers grown by molecular-beam epitaxy are studied. The unintentional doping level in the n-type layers is determined by Hall effect measurements. Low-temperature photoluminescence measurements attest to high quality of the layers. Using a phosphorus-doped silicon sublimation source,...

  • Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction. Wölz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H. // Applied Physics Letters;6/27/2011, Vol. 98 Issue 26, p261907 

    Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with InxGa1-xN quantum wells inserted to form an axial superlattice. From the ω-2θ scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics