Gas source iodine n-type doping of molecular beam epitaxially grown CdTe

Rajavel, D.; Summers, C.J.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2231
Academic Journal
Examines the growth of highly conductive n-type cadmium telluride films through molecular beam epitaxy by iodine doping using ethyliodide. Increase of room-temperature electron concentration for dopant flow rate; Determination of the structural and optical properties by x-ray double crystal rocking curve; Identification of the electrical activity and sharp dopant profiles.


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