Transmission electron microscopy characterization of defects resulting from the polycrystalline

Dixit, G.A.; Hodges, R.L.
May 1992
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2228
Academic Journal
Examines the nitrogen rich regions in the polycrystalline silicon film using polybuffered local oxidation of silicon. Analysis of the structure and composition of defects in the silicon region; Characterization of the defects to a phenomenon similar to the traditional Kooi effect; Identification of nitrogen rich defects at the edge of the active area.


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