TITLE

Transmission electron microscopy characterization of defects resulting from the polycrystalline

AUTHOR(S)
Dixit, G.A.; Hodges, R.L.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2228
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the nitrogen rich regions in the polycrystalline silicon film using polybuffered local oxidation of silicon. Analysis of the structure and composition of defects in the silicon region; Characterization of the defects to a phenomenon similar to the traditional Kooi effect; Identification of nitrogen rich defects at the edge of the active area.
ACCESSION #
4241218

 

Related Articles

  • Electrical activity of the first- and second-order twins and grain boundaries in silicon. Bary, A.; Nouet, G. // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p435 

    Investigates the structural and electrical properties of twins in polycrystalline silicon materials using electron-beam-induced current (EBIC) and transmission electron microscopy (TEM). Applications of polycrystalline silicon; Principle of the EBIC technique; Geometrical analysis of grain...

  • Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane. Hasegawa, S.; Watanabe, S.; Inokuma, T.; Kurata, Y. // Journal of Applied Physics;3/1/1995, Vol. 77 Issue 5, p1938 

    Investigates the structure of polycrystalline silicon (Si) films prepared from amorphus silicon deposited using disilane. Factor attributed to the increase in the transmission electron microscopy size; Effects of post-hydrogenation on the poly-Si films; Description of structural properties.

  • Line Scaling Effect on Grain Structure for Cu Interconnects. Lijuan Zhang; Im, Jay; Ho, Paul S. // AIP Conference Proceedings;6/18/2009, Vol. 1143 Issue 1, p151 

    The effect of line scaling on Cu grain structures has been investigated by using both plan-view and cross-sectional transmission electron microscopy (TEM) techniques. Cu damascene lines with three different line widths of 850, 185 and 60 nm were studied. The plan-view TEM images revealed that...

  • Influence of the microstructure on the thermal properties of thin polycrystalline diamond films. Verhoeven, H.; Floter, A. // Applied Physics Letters;9/8/1997, Vol. 71 Issue 10, p1329 

    Examines the influence of microstructures on the thermal properties of thin polycrystalline diamond films. Use of photothermal techniques and high-resolution transmission electron microscopy in the process; Depiction of diamond-silicon boundary resistance for thermal conduction; Applicability...

  • Amorphous and crystalline IrSi Schottky barriers on silicon. Wörle, D.; Grünleitner, H.; Demuth, V.; Kumpf, C.; Strunk, H.P.; Burkel, E.; Schulz, M. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 6, p629 

    Abstract. Iridium silicide IrSi layers are fabricated by evaporating Ir metal on Si(100) substrates and applying a subsequent silicidation anneal at 500 Celsius. The films fabricated are structurally analyzed by X-ray diffraction and by high-resolution transmission electron microscopy. The...

  • Magnetic energy distribution in polycrystalline sputtered CoCr magnetic thin films. J. Al-Sharab; J. Wittig; G. Bertero; T. Yamashita; J. Bentley; N. Evans // European Physical Journal - Applied Physics;May2008, Vol. 42 Issue 2, p125 

    Magnetic thin films of Co80Cr16Ta4were sputtered onto identical CrMo seed-layers at ?200?V bias and 3 different substrate temperatures (150, 200, and 250??C). Energy-filtered transmission electron microscopy (EFTEM) was performed to analyze Cr levels at the grain boundaries as well as inside the...

  • Structure and morphology of polycrystalline silicon-single crystal silicon interfaces. Bravman, John C.; Patton, Gary L.; Plummer, James D. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2779 

    Focuses on a study that correlated the morphological aspects of the polycrystalline silicon-single crystal silicon interface to the surface treatment using transmission electron microscopy. Role of the interface in the electrical behavior of metal-oxide semiconductor transistors; Types of...

  • Resistivity and Hall voltage study of phosphorus segregation in polycrystalline Si[sub 1-x]Ge[sub x] films. Qin, W.; Ast, D. G.; Kamins, T. I. // Journal of Applied Physics;7/1/2002, Vol. 92 Issue 1, p168 

    Hall and resistivity measurements as functions of temperature were used to study the segregation of phosphorus in atmospheric-pressure chemical-vapor deposited, ∼300-nm-thick, polycrystalline Si[sub 0.95]Ge[sub 0.5] and Si[sub 0.9]Ge[sub 0.1] thin films, implanted at 80 keV with 6 ×...

  • Characterization of polycrystalline silicon–single-crystal silicon interfaces and correlation to bipolar transistor device data. Ronsheim, Paul A.; Cunningham, Brian; Dupuis, Mark D. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p495 

    Presents information on a study which utilized depth-resolved secondary-ion mass spectrometry (SIMS) and high-resolution transmission electron microscopy to study the composition and structure of the arsenic-doped polycrystalline silicon-single-crystal silicon interface. Fabrication of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics