TITLE

Ellipsometry for rapid characterization of Si[sub 1-x]Ge[sub x] layers

AUTHOR(S)
Racanelli, M.; Drowley, C.I.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2225
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on the ability of ellipsometry to determine the germanium content and the film thickness of Si[sub 1-x]Ge[sub x] layers deposited on silicon substrates. Estimation of the refractive index of Si[sub 1-x]Ge[sub x]; Sensitivity of the ellipsometry to changes in germanium content and thickness; Difference of the real part of the refractive index with the silicon.
ACCESSION #
4241217

 

Related Articles

  • Three-beam interference method for measuring very thin films. Leizerson, I.; Lipson, S. G. // Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p260 

    We present an experimental method which allows the real time measurement of the thickness of a thin film on a transparent substrate in an imaging mode. Imaging ellipsometry cannot be used for such problems because of reflections from the backsurface of the substrate. Its application to the...

  • Ellipsometric Technique for Estimating the Thickness Nonuniformity of Thin-Film Coatings. Baturin, A.; Bormashov, V.; Gavrilenko, V.; Zablotskii, A.; Zaitsev, S.; Kuzin, A.; Todua, P.; Filippov, M. // Measurement Techniques;Feb2014, Vol. 56 Issue 11, p1224 

    An ellipsometric technique is proposed for estimating the thickness uniformity of thin film coatings in the range of 5-150 nm.

  • Thickness-dependence of optical constants for TaO ultrathin films. Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao // Applied Physics A: Materials Science & Processing;Sep2012, Vol. 108 Issue 4, p975 

    An effective method for determining the optical constants of TaO thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. TaO thin films with thickness range of 1-400 nm have been...

  • Structural studies of annealed ultrathin La[sub 0.8]MnO[sub 3] films. Qian, Q.; Tyson, T. A.; Dubourdieu, C.; Bossak, A.; Se´nateur, J. P.; Deleon, M.; Bai, J.; Bonfait, G. // Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2663 

    A detailed study of the long-range, nanoscale, and local structure of La[sub 0.8]MnO[sub 3] films of varying thickness was performed. These measurements give insight on the relative volumes of the insulating and metallic regions. A thin metallic surface region is found in all films. The nature...

  • High-precision low-cost quartz-crystal thin-film monitor with temperature control. Kremer, G.; Moraga, L. A. // Review of Scientific Instruments;Jul1985, Vol. 56 Issue 7, p1467 

    An accurate thin-film thickness monitor capable of a resolution of at least 0.01 nm is described. The errors arising from the temperature dependence of the crystal resonant frequency are minimized by heating a closely matched reference crystal until their temperatures are equalized; and by...

  • Critical thickness of a heteroepitaxial film on a twist-bonded compliant substrate. Obayashi, Y.; Shintani, K. // Journal of Applied Physics;7/1/2000, Vol. 88 Issue 1, p105 

    Determines the critical thickness for misfit dislocation formation in a heteroepitaxial film on a twist-bonded compliant substrate. Increase in the critical thickness with the decrease of the compliant substrate thickness; Difference in critical thicknesses for the twist-bonded compliant...

  • Analysis of a transient region during the initial stage of atomic layer deposition. Lim, Jung-Wook; Park, Hyung-Sang; Kang, Sang-Won // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6327 

    In atomic layer deposition (ALD), it is well known that a linear relationship exists between the deposited film thickness and the number of deposition cycles, which is due to its inherent characteristics of self-limited surface reaction between reactants. However, during the initial stage of...

  • In situ ellipsometry study of the kinetics of hydrogen plasma interaction with a-Si:H thin films: A particular temperature-dependence. Hadjadj, A.; Djellouli, G.; Jbara, O. // Applied Physics Letters;11/22/2010, Vol. 97 Issue 21, p211906 

    We performed H2 plasma treatment of hydrogenated amorphous silicon (a-Si:H) thin films and followed by in situ spectroscopic ellipsometry measurements the kinetics of hydrogen-induced film modifications at temperatures varying from 100 to 250 °C. The time-dependence of the H-modified layer...

  • The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties. Horvat, G. T.; Kondratenko, O. S.; Loja, V. Ju.; Myholynets, I. M.; Rosola, I. J.; Jurkovych, N. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2007, Vol. 10 Issue 1, p45 

    The mechanisms of formation of modified thin-film structures based on Ge-Se(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics