TITLE

Modulation of photoluminescent intensity by applying high electric field in doubly insulated

AUTHOR(S)
Ando, M.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2189
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the emission modulation effect produced by applying electric fields in a CaS:Eu phosphor thin film. Impact of increasing applied electric field and the maximum modulated degree on the photoluminescent intensity; Influence of field-induced ionization on the photoluminescent modulation effect; Application of phosphor films as a spatial light modulator.
ACCESSION #
4241205

 

Related Articles

  • Al[sub x]Ga[sub 1-x]N/GaN band offsets determined by deep-level emission. Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y. // Journal of Applied Physics;8/15/2001, Vol. 90 Issue 4, p1887 

    We present studies of the compositional dependence of the optical properties of AlGaN(0

  • Holographic recording in photorefractive thin films: Edge effects. Aguilar, María; Carrascosa, M.; Agulló-López, F.; Magaña, L. F. // Journal of Applied Physics;10/15/1995, Vol. 78 Issue 8, p4840 

    Details a study which analyzed the initial holographic recording rate for a photorefractive thin films. Rate equations for photorefractive thin films; Holographic recording rates for small modulation depths; Diffraction properties of a photorefractive thin film.

  • Photocurrent probe of field-dependent mobility in organic thin-film transistors. Breban, M.; Romero, D. B.; Mezhenny, S.; Ballarotto, V. W.; Williams, E. D. // Applied Physics Letters;11/14/2005, Vol. 87 Issue 20, p203503 

    We demonstrate the application of photocurrent modulation spectroscopy in characterizing the performance of organic thin-film transistors. This technique provides a consistent framework to extract the mobility and density of free-carriers from experimental data without relying on assumed models...

  • Electroluminescence and photoluminescence in sputtered ZnS:TbFx thin films. Okamoto, Kenji; Watanabe, Kazuhiro // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p578 

    A study has been made on the electroluminescence (EL) and photoluminescence (PL) spectra of sputtered ZnS:TbFx thin films. The brightness and EL spectra are strongly dependent on x. The highest brightness has been obtained at x=1. From a comparison of EL and PL of standard samples, we conclude...

  • Photoluminescence and magnetoreflectivity study of Zn1-xFexSe epilayers. Liu, X.; Petrou, A.; Jonker, B. T.; Prinz, G. A.; Krebs, J. J.; Warnock, J. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p476 

    Single-crystal films of (001)Zn1-xFexSe (x=0.017, 0.027, 0.043) grown by molecular beam epitaxy on (001)GaAs have been studied using reflectivity and photoluminescence spectroscopies. Data have been obtained over the temperature range 4–77 K in magnetic fields up to 8 T in the spectral...

  • Influence of thermal annealing on the intensity of the 1.54-�m photoluminescence band in erbium-doped amorphous hydrogenated silicon. Andreev, A. A.; Voronkov, V. B.; Golubev, V. G.; Medvedev, A. V.; Pevtsov, A. B. // Semiconductors;Jan1999, Vol. 33 Issue 1, p93 

    Erbium-doped a-Si:H films are prepared by magnetron sputtering of a Si-Er target at a deposition temperature of 200 �C. The films are then subjected to cumulative thermal annealing. A sharp increase (~50-fold) in the photoluminescence intensity at a wavelength of 1.54 �m is observed...

  • Luminescent ZnS:Cu Films Prepared by Chemical Methods. Svechnikov, S. V.; Zav�yalova, L. V.; Roshchina, N. N.; Rodionov, V. E.; Khomchenko, V. S.; Berezhinskii, L. I.; Prokopenko, I. V.; Litvin, P. M.; Litvin, O. S.; Kolomzarov, Yu. V.; Tsyrkunov, Yu. A. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1128 

    For the first time, ZnS:Cu films with an intense photoluminescence were prepared by a chemical nonvacuum method. They were produced by means of the combined pyrolytic deposition of zinc and copper dithiocarbamates onto glass and ceramic substrates heated up to 260-300�C. A close packing of...

  • Spectra of Photoluminescence from Silicon Nanocrystals. Kaganovich, �. B.; Manoilov, �. G.; Basylyuk, I. R.; Svechnikov, S. V. // Semiconductors;Mar2003, Vol. 37 Issue 3, p336 

    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest...

  • Luminescence of pulsed laser deposited Eu doped yttrium oxide films. Jones, S.L.; Kumar, D. // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p404 

    Examines the growth of europium doped yttrium oxide (Eu:Y[sub 2]O[sub 3] phosphor thin films using the pulsed laser deposition technique. Characterization of Y[sub 2]O[sub 3] films; Measurement of the photoluminescence and properties of laser deposited Eu:Y[sub 2]O[sub 3] films; Improvements in...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics