TITLE

Double wavelength selective GaAs/AlGaAs infrared detector device

AUTHOR(S)
Kock, A.; Gornik, E.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p2011
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the gallium arsenide (GaAs)/aluminum GaAs multiquantum well infrared detector device with double wavelength selectivity and high wavelength resolution. Application of a light coupling mechanism; Comparison of the mechanism efficiency to a standard coupling geometry; Determination of wavelength responsivity and detectivity.
ACCESSION #
4241194

 

Related Articles

  • Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetector. Levine, B. F.; Hasnain, G.; Bethea, C. G.; Chand, Naresh // Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2704 

    Broadband GaAs/AlxGa1-xAs quantum well infrared detectors grown by molecular beam epitaxy have been demonstrated which are sensitive over the λ=8–12 μm atmospheric window spectral region. These are the first high-detectivity bound state to extended state quantum well detectors which...

  • A normal incidence two-color p-type compressive strained-layer In0.4Ga0.6As/GaAs quantum well infrared photodetector for 3–5 μm and 8–12 μm detection. Wang, Y. H.; Chu, J.; Li, Sheng S.; Ho, Pin // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p6009 

    Demonstrates a normal incidence two-color p-type compressive strained-layer (PSL) In[sub0.4]Ga[sub0.6]As/gallium arsenide quantum well infrared detector for the 3-5 µm and 8-12 µm detection. Description of the compressive strained layer; Key ingredients of the energy band configurations...

  • Design and performance of very long-wavelength GaAs/AlxGa1-xAs quantum-well infrared photodetectors. Sarusi, G.; Gunapala, S. D.; Park, J. S.; Levine, B. F. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p6001 

    Describes the design and performance of very long-wavelength gallium arsenide/Al[subx]Ga[sub1-x]As quantum-well infrared photodetectors. Design, growth and processing of the samples used in the study; Responsivity measurements of the samples; Expression used to obtain the detectivity of the...

  • Dependence of the performance of GaAs/AlGaAs quantum well infrared photodetectors on doping and bias. Gunapala, S. D.; Levine, B. F.; Pfeiffer, L.; West, K. // Journal of Applied Physics;5/1/1991, Vol. 69 Issue 9, p6517 

    Presents a study that measured and theoretically analyzed the dependence of the performance of gallium arsenide/AlGaAs quantum well infrared photodetectors on doping and bias. Methods used in growing the samples; Analysis of infrared absorption measurements; Determination of the peak...

  • Experimental and theoretical studies of the performance of quantum-well infrared photodetectors. Andrews, S. R.; Miller, B. A. // Journal of Applied Physics;7/15/1991, Vol. 70 Issue 2, p993 

    Focuses on a study which assessed the performance of GaAs/AlGaAs quantum-well infrared detectors. Experimental procedures; Dark current modeling; Measurements; Summary and conclusion.

  • Ultrafast intersubband photocurrent response in quantum-well infrared photodetectors. Ehret, S.; Schneider, H. // Applied Physics Letters;8/4/1997, Vol. 71 Issue 5, p641 

    Examines the photocurrent response of a gallium arsenide/aluminum gallium arsenide multiple quantum well infrared photodetector. Photocurrent excitation by ultrafast tunable infrared pulses; Use of a 40 gigahertz coplanar microwave probe for device contacts; Device response time limitation by...

  • Voltage-controlled tunable GaAs/AlGaAs multistack quantum well infrared detector. Grave, I.; Shakouri, A. // Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2362 

    Describes the intersubband gallium arsenide/aluminum gallium arsenide multistack quantum well infrared detector. Characteristics of each stack; Application of a Fourier transform infrared spectrometer; Domain switching behavior of the device.

  • A 10 mum GaAs/Al[sub x]Ga[sub 1-x]As intersubband photodetector operating at zero bias voltage. Schonbein, C.; Schneider, H. // Applied Physics Letters;2/12/1996, Vol. 68 Issue 7, p973 

    Demonstrates the operation of a ten micrometer photovoltaic intersubband infrared detector based on modulation doped gallium arsenide quantum wells and asymmetric Al[sub 0.27]Ga[sub 0.73]As/Al[sub 0.20]Ga[sub 0.80]As barriers. Transport properties of the structure; Use of Fourier spectrometer...

  • Photovoltaic quantum well infrared detector. Goossen, K. W.; Lyon, S. A.; Alavi, K. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1701 

    A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics