Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors

Li, P.W.; Wang, Q.
April 1992
Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1996
Academic Journal
Examines the effects of electron cyclotron resonance hydrogen, nitrogen, and ammonia plasma by x-ray photoelectron spectroscopy. Removal of the native oxide on the gallium arsenide surface; Formation of a mixed nitride-oxide surface layer; Potential of the plasma treatments for the surface passivation of semiconductor heterojunction bipolar transistors.


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