TITLE

Oxygen assisted ohmic contact formation mechanism to n-type GaAs

AUTHOR(S)
Lustig, Naftali; Schad, R.G.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1984
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the oxygen assisted ohmic contact formation mechanism to n-type gallium arsenide. Effects of the top tungsten layers on the electrical properties of the contacts; Components of the contacts; Role of oxygen in obtaining a low contact resistance.
ACCESSION #
4241185

 

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