Raman spectra of individual Si thin layers with 4-40 atomic layer thicknesses buried in GaAs (001)

Tanino, H.; Kawanami, H.
April 1992
Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1978
Academic Journal
Examines the thickness dependence of the Raman spectra of the silicon (Si) layers. Overview of the stress and strain effect on the Si optical phonon modes; Components of the Raman spectrometer; Details on the three-dimensional confinement effect as a candidate of the broad peaks.


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