Residue-free reactive ion etching of beta-SiC in CHF[sub 3]/O[sub 2] with H[sub 2] additive

Steckl, A.J.; Yih, P.H.
April 1992
Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1966
Academic Journal
Examines the residue-free ion etching of beta-silicon carbide in CHF[sub 3]/O[sub 2] with H[sub 2] additive. Correlation between the formation of residues and the sputter deposition of aluminum (Al) particles; Mechanisms responsible for the prevention of residues; Link between the presence of the H[sub 2] additive in the plasma and the absence of Al.


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