Si-implanted InGaP/GaAs metal-semiconductor field-effect transistors

Hyuga, Fumiaki; Aoki, Tatsuo
April 1992
Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1963
Academic Journal
Proposes a device structure for silicon-implanted gallium arsenide (GaAs) metal-semiconductor field-effect transistors. Qualities of annealed indium-gallium phosphide/GaAs interfaces; Details on the intensity of the GaAs band-edge photoluminescence; Ways to achieve high-density GaAs integrated circuits.


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