TITLE

Si-implanted InGaP/GaAs metal-semiconductor field-effect transistors

AUTHOR(S)
Hyuga, Fumiaki; Aoki, Tatsuo
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1963
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Proposes a device structure for silicon-implanted gallium arsenide (GaAs) metal-semiconductor field-effect transistors. Qualities of annealed indium-gallium phosphide/GaAs interfaces; Details on the intensity of the GaAs band-edge photoluminescence; Ways to achieve high-density GaAs integrated circuits.
ACCESSION #
4241178

 

Related Articles

  • Roles of shallow and deep electron traps causing backgating in GaAs metal-semiconductor field-effect transistors. Khanna, Ravi; Das, Mukunda B. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p937 

    In GaAs metal-semiconductor field-effect transistors under backgating conditions, electrons can be trapped in ‘‘shallow’’ and deep trap levels. It is shown that the characteristics of these traps can be determined and those responsible for backgating can be identified...

  • Nonlinear high-frequency response of GaAs metal-semiconductor field-effect transistors. Abeles, J. H.; Tu, C. W.; Schwarz, S. A.; Brennan, T. M. // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1620 

    Calculations show that phase nonlinearity in 1 μm gate length power GaAs metal-semiconductor field-effect transistors (MESFET’s) can be accounted for by the variation of gate-channel capacitance with gate bias voltage. Buried-layer GaAs MESFET’s having constant gate-channel...

  • Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates. Aksun, M. I.; Morkoç, H.; Lester, L. F.; Duh, K. H. G.; Smith, P. M.; Chao, P. C.; Longerbone, M.; Erickson, L. P. // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1654 

    Metal-semiconductor field-effect transistors (MESFET’s) having quarter-micron gate lengths were fabricated in GaAs films grown directly on <100> silicon tilted towards <110> by 4°. Following the growth of 2 μm undoped GaAs buffer layer a 3 μm GaAs doped with Si to a level of...

  • The Effect of Hydrogenation on the Sink Breakdown Voltage of Transistors Based on Ion-Doped Gallium Arsenide Structures. Kagadeı, V. A.; Nefyodtsev, E. V.; Proskurovsky, D. I.; Romanenko, S. V.; Shirokova, L. S. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p12 

    It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such structures (from 7 up to 17 V) and in the power of related microwave integration...

  • Electrical properties of a W-B-N Schottky contact to GaAs. Kim, Yong Tae; Woo Lee, Chang; Joon Kim, Dong // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    We have achieved the highest barrier height (0.90 eV) with a Schottky contact scheme of W-B-N/GaAs after rapid thermal annealing (RTA) at 700 °C, and even after the RTA at 900 °C, its barrier height (0.77 eV) is relatively higher than those of W (0.55 eV) and W-N/GaAs Schottky contacts...

  • Heteroepitaxial In0.1Ga0.9As metal-semiconductor field-effect transistors fabricated on GaAs and Si substrates. Wang, G. W.; Ito, C.; Feng, M.; Kaliski, R.; McIntyre, D.; Lau, C.; Eu, V. K. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1552 

    We present a comparison of device characteristics for In0.1 Ga0.9 As metal-semiconductor field-effect transistors (MESFETs) fabricated on GaAs and silicon substrates. The In0.1Ga0.9As layers are heteroepitaxially grown on GaAs and silicon substrates by metalorganic chemical vapor deposition. 0.5...

  • Elimination of the kink effect in GaAs metal semiconductor field-effect transistors by utilizing.... Haruyama, Junzi; Goto, Norio // Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p928 

    Investigates the elimination of the kink effect in gallium arsenide metal semiconductor field-effect transistors (FET) by utilizing a low-temperature buffer (LTB) layer. Components of LTB layer; Characteristics of the sidegating effect; Causes of the kink effect in type B FET.

  • Quantum limit of a narrow-channel GaAs metal-semiconductor field-effect transistor. Roos, G.; Berggren, K.-F. // Journal of Applied Physics;12/1/1987, Vol. 62 Issue 11, p4625 

    Focuses on a study which analyzed the operation of a special GaAs metal-semiconductor field-effect transistor for studies of low-dimensional transport in terms of a variational model designed for the quantum limit. Calculation of the relation between electron concentration and gate voltage;...

  • Thermal and chemical stability of Schottky metallization on GaAs. Lau, S. S.; Chen, W. X.; Marshall, E. D.; Pai, C. S.; Tseng, W. F.; Kuech, T. F. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1298 

    The high-temperature stability of Schottky barriers on GaAs has been correlated with the thermodynamic driving force for chemical reaction between the metallic contacts and the substrate. The chemical stability of a gate metallurgy can result in the stability of the electrical characteristics of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics