TITLE

Atomic layer epitaxy of GaAs and role of As-source materials on self-limiting mechanism

AUTHOR(S)
Fujii, Kazuyuki; Suemune, Ikuo
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1498
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Explores the atomic layer epitaxy (ALE) of gallium arsenide using triethylgallium with the combination of arsine. Expansion of the temperature range for ALE; Role of arsenide source materials on the self-limiting mechanism; Measurement of surface reaction species employing a transient quadrupole mass spectroscopy.
ACCESSION #
4241156

 

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