TITLE

Possible new structure for one-dimensional electron-gas systems by interface bending of

AUTHOR(S)
Sawada, Akemi; Usagawa, Toshiyuki
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1492
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Proposes a concept in one-dimensional electron-gas systems. Introduction of periodic bending of the heterointerface of an aluminum gallium arsenide/gallium arsenide modulation-doped structure; Analysis of the carrier densities and the electrostatic potential; Impact of high density of electrons on field-electron transistors.
ACCESSION #
4241154

 

Related Articles

  • The proximity effect of the regrowth interface on two-dimensional electron density in strained Si. Liu, J.; Lu, T. M.; Kim, J.; Lai, K.; Tsui, D. C.; Xie, Y. H. // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p112113 

    We studied the density of two-dimensional electron gas (2DEG) in Si/SiGe heterostructures as a function of the distance between the substrate-epilayer interface and the 2DEG layer. The 2DEG sheet density was observed to change from 2.2×1011 to 3.5×1011 cm-2. Theoretical simulations are...

  • Roughness effects on the electrostatic-image potential near a dielectric interface. Palasantzas, George // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p351 

    Studies roughness effects on the electrostatic-image potential of a point charge situated in the vicinity of a rough dielectric-vacuum interface. Electrostatic potential and Poisson equation; Electrostatic potential for self-affine morphology.

  • In situ Hall measurement of two-dimensional electron gas at Al[sub 0.3]Ga[sub 0.7]As/GaAs.... Kanayama, Toshihiko; Takeuchi, Yukihiro // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1402 

    Demonstrates two-dimensional electron gas (2DEG) at aluminum gallium arsenide/gallium arsenide interface. Irradiation of 2DEG by argon ions; Effect of channeling on irradiation defects; Performance of isochronal anneals for the thermal behavior of created defects.

  • Interface between low-temperature grown GaAs and undoped GaAs as a conduction barrier for back.... Maranowski, K.D.; Ibbetson, J.P. // Applied Physics Letters;6/19/1995, Vol. 66 Issue 25, p3459 

    Presents an interface between low-temperature grown gallium arsenide and undoped gallium arsenide as a conduction barrier for back gates. Variation of the sheet concentration of the two-dimensional electron gas; Observation of the similarity of the distance between the plates and the channel...

  • Determination of interface properties between a depleted heteroepitaxial layer and a substrate from capacitance measurements. Goren, D.; Nemirovsky, Y. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p244 

    Presents a method for the determination of interface properties between a depleted heteroepitaxial layer and a substrate from capacitance measurements. Electrostatic analysis of the interface; Effects of interface charges and interface dipoles; Methodology based on the measured zero bias...

  • Vibrational structure of an electrostatically bound ion–water complex. Lessen, D. E.; Asher, R. L.; Brucat, P. J. // Journal of Chemical Physics;10/15/1990, Vol. 93 Issue 8, p6102 

    Supersonically cooled VH2O+ is resonantly one-photon dissociated in the visible region. An excited state vibrational progression in the V+(OH2) stretching mode is observed with a frequency W’e=339 cm-1 and an anharmonicity We X’e =4.5 cm-1. Analysis of the spectra of isotopically...

  • Growth studies on Si[sub 0.8]Ge[sub 0.2] channel two-dimensional hole gases. Smith, D.W.; Emeleus, C.J. // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1453 

    Examines the influence of molecular beam epitaxy on the low-temperature mobilities of silicon (Si)/Si germanide (Ge) two-dimensional hole gas structures (2DHG). Increase of Si liner in the Ge source by 2DHG mobilities; Dependence of 2DHG mobility on growth temperature; Domination of...

  • Electronic structure of a Ba/ n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas. Benemanskaya, G. V.; Zhmerik, V. N.; Lapushkin, M. N.; Timoshnev, S. N. // JETP Letters;Aug2010, Vol. 91 Issue 12, p670 

    The electronic structure of ultrathin Ba/ n-AlGaN(0001) interfaces has been investigated in situ in an ultra-high vacuum by the ultraviolet photoelectron spectroscopy method. The photoemission spectra from the n-AlGaN valence band and the spectra of the core levels Ga 3 d, Al 2 p, and Ba 4 d...

  • Native Disorder Potential at the Surface of a Heavily Doped Semiconductor. Bondarenko, V. B.; Korablev, V. V.; Ravich, Yu. I. // Semiconductors;Mar2004, Vol. 38 Issue 3, p319 

    The dependence of native potential inhomogeneities on spatial dispersion of the dielectric response of the two-dimensional electron gas at the surface of a heavily doped semiconductor is discussed. The amplitude and scale of the disorder potential in the case of a strongly degenerate surface...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics