TITLE

Influence of process parameters on the time-dependent dielectric breakdown of rapid thermally

AUTHOR(S)
Joshi, A.B.; Kwong, D.L.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1489
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the impact of rapid thermal nitridation (RTN) and subsequent reoxidation (RTO) on the time-dependent dielectric breakdown of thin-gate oxides. Correlation of breakdown characteristics with compositional changes; Achievement of an optimal RTN/RTO gate oxide; Estimation of the defect density in various gate dielectrics.
ACCESSION #
4241153

 

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