TITLE

Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor

AUTHOR(S)
Hummel, S.G.; Zou, Y.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1483
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the characteristics of gallium arsenide, aluminum gallium arsenide, and indium gallium arsenide materials grown by metalorganic chemical vapor deposition using hydride gas generator. Generation of low pressure arsine gas; Use of generated and bottled arsine in the growth of the structures; Analysis of the photoluminescence measurements.
ACCESSION #
4241151

 

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