Dislocation reduction in the annealed undercut GaAs on Si

Sakai, Shiro; Chun Lin Shao
March 1992
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1480
Academic Journal
Investigates the dislocations in the undercut gallium arsenide on silicon by the cross-sectional transmission electron microscope. Importance in the absence of gallium arsenide/silicon interface as a key feature in the elimination of dislocation; Movement of dislocation by the residual stress; Reduction of dislocation density and stress by annealing.


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