Hole space-charge buildup and evidence for sequential tunneling in p-type double-barrier

Hayden, R.K.; Eaves, L.
March 1992
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1474
Academic Journal
Measure the buildup of hole space charge in the aluminum arsenide/gallium arsenide/aluminum arsenide quantum well over a wide range of bias. Use of magnetoquantum oscillations in the tunnel current; Demonstration of sequential tunneling of holes; Estimation of the effective mass for hole tunneling.


Related Articles

  • Optical evidences of assisted tunneling in a biased double quantum well structure. Liu, H. W.; Ferreira, R.; Bastard, G.; Delalande, C.; Palmier, J. F.; Etienne, B. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2082 

    Experimental evidences of electron and hole resonant tunnelings are obtained in a biased double quantum well system using optical methods. Calculations of the defect-induced tunneling rates are performed and compared with experiments.

  • Hole antiresonances above quantum wells. Ekbote, S.; Cahay, M. // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p924 

    Presents information on a study which deals with the effects of the spin-orbit split-off band on the properties of holes tunneling across quantum wells using Luttinger-Kohn Hamiltonian equation. Description of the approach; Analysis of the tunneling properties of holes across an indium compound...

  • Temperature dependence of the performance of charge-sensitive infrared phototransistors. Ueda, Takeji; Komiyama, Susumu; An, Zhenghua; Nagai, Naomi; Hirakawa, Kazuhiko // Journal of Applied Physics;Mar2009, Vol. 105 Issue 6, p064517 

    The performance of charge-sensitive infrared phototransistors (λ∼14.7 μm) is studied at temperatures of up to 30 K. The devices, with a 16×4 μm2 photoactive area, are fabricated in GaAs/AlGaAs double-quantum-well structure. An excellent specific detectivity D*=9.6×1014 cm...

  • Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator. Rahman, F.; Gallagher, B. L.; Behet, M.; De Boeck, J. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    We report on a technique we have recently developed to fabricate very high quality gates and gated structures on InAs/Al[sub x]Ga[sub 1-x]Sb quantum wells. The low thermal budget process leads to highly stable gates with extremely low leakage currents. Both electron and hole concentrations can...

  • Optical transitions between light hole subbands in InGaAs/InP strained layer multiquantum wells. Ilouz, I.; Oiknine-Schlesinger, J. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2268 

    Observes the light hole intersubbands transitions in both p-doped and photoexcited undoped strained indium gallium arsenide/indium phosphide multi-quantum well structures. Polarization of the absorption along the growth direction; Identification of impurity bound and free holes transitions;...

  • Subband dispersion of holes in AlAs/In[sub 0.10]Ga[sub 0.90]As/AlAs strained-layer quantum wells.... Lin, S.Y.; Zaslavsky, A. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p601 

    Determines the subband dispersion of holes in double-barrier aluminum arsenide/indium[sub 0.10]gallium[sub 0.90]arsenide/aluminum arsenide strained-layer quantum wells. Analysis of the resonant magnetotunneling of holes; Observation of mass reversal, nonparabolicity and anticrossing; Lack of...

  • Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results. Belhadj, C. Y.; Martin, K. P.; Ben Amor, S.; Rascol, J. J. L.; Higgins, R. J.; Potter, R. C.; Hier, H.; Hempfling, E. // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p58 

    Using the stable, dc current-voltage (I-V) curve measured from a double-barrier resonant tunneling structure, we have studied the effects of external circuit elements on device oscillations. A simulation, using the experimental I-V and a simple circuit model for the biasing arrangement, showed...

  • Overheating effect and hole-phonon interaction in SiGe heterostructures. Berkutov, I. B.; Andrievskii, V. V.; Komnik, Yu. F.; Myronov, M.; Mironov, O. A. // Low Temperature Physics;Nov2008, Vol. 34 Issue 11, p943 

    The effect of charge-carrier overheating in a two-dimensional (2D) hole gas is realized in a Si1-xGex quantum well, where x=0.13, 0.36, 0.8, or 0.95. The Shubnikov–de Haas (SdH) oscillation amplitude is used as a “thermometer” to measure the temperature of overheated holes....

  • Rashba effect on the plasma oscillations in a coupled bilayer of electrons and holes. Gumbs, Godfrey // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2821 

    We consider the effect of spin-orbit (SO) coupling on the plasma oscillations for a coupled system of two-dimensional electron or heavy hole (HH) gases. The Rashba effect lifts the degeneracy of the energy spectrum and produces a linear term for electrons but a cubic term for HH states in wave...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics