Density of states in the pseudo-gap of amorphous silicon-germanium alloys from electrical and

Pisarkiewicz, T.; Kolodziej, A.
March 1992
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1465
Academic Journal
Investigates the preparation of amorphous hydrogenated silicon-germanium alloys by sputtering and chemical vapor deposition methods. Determination of the optical energy gap, band-tail states distribution, density of defect states near midgap; Measurement of dark conductivity and photoconductivity; Derivation of electronic band structure.


Related Articles

  • Light absorption and electrical transport in Si:O alloys for photovoltaics. Mirabella, S.; Di Martino, G.; Crupi, I.; Gibilisco, S.; Miritello, M.; Lo Savio, R.; Di Stefano, M. A.; Di Marco, S.; Simone, F.; Priolo, F. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p093507 

    Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy...

  • Photoconductance measurements on thin InGaN layers. Reverchon, Jean-Luc; Huet, Frederic; Poisson, Marie-Antoinette; Duboz, Jean-Yves // Journal of Applied Physics;11/1/2000, Vol. 88 Issue 9, p5138 

    Reports on photoluminescence (PL), transmission and photoconductance (PC) studies of alloys grown by metalorganic chemical vapor deposition. Ability of the PC to provide reliable gap estimates for a large range of film thicknesses in contrast to transmission or photoreflectance experiments;...

  • Extrinsic photoconductivity in chemical vapor deposition diamond. Jeng, David G.; Tuan, H.S. // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1271 

    Studies the extrinsic photoconductivity in chemical vapor deposition diamond. Diamond films grown by chemical vapor deposition; Linear increase of photocurrents; Use of a tungsten halogen light source for illumination.

  • Growth of In[sub 1-x]Ti[sub x]Sb, a new infrared material, by low-pressure metalorganic....  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p361 

    Examines the growth of In[sub 1-x]Tl[sub x]Sb alloy by low-pressure metalorganic chemical vapor deposition. Attainment of good surface morphology on gallium arsenide and indium antimonide substrate; Examination of the infrared absorption spectrum of In[sub 1-x]Tl[sub x]Sb; Substrate temperature...

  • Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor... Liu, C. W.; Tseng, Y. D. // Journal of Applied Physics;2/15/1999, Vol. 85 Issue 4, p2124 

    Presents information on a study which investigated the stability of alloys grown by rapid thermal chemical vapor deposition at different annealing temperatures. Use of high resolution x-ray diffraction; Use of Fourier transform infrared spectroscopy; Characterization and discussion; Conclusions.

  • Optical properties of InxGa1-xN alloys grown by metalorganic chemical vapor deposition. Shan, W.; Walukiewicz, W. // Journal of Applied Physics;10/15/1998, Vol. 84 Issue 8, p4452 

    Presents a study using metalorgainc chemical vapor deposition to investigate the optical properties of InxGa1-xN alloys. Methodology used to conduct the study; Details on the alloying effects; Information on the pressure and temperature dependence; Findings of the study.

  • Selective low-pressure chemical vapor deposition of Si1-xGex alloys in a rapid thermal processor using dichlorosilane and germane. Zhong, Yulin; Öztürk, Mehmet C.; Grider, Douglas T.; Wortman, Jimmie J.; Littlejohn, Michael A. // Applied Physics Letters;11/12/1990, Vol. 57 Issue 20, p2092 

    Low-pressure chemical vapor deposition of Si1-xGex alloys in a cold wall, lamp-heated rapid thermal processor was studied. Alloys were deposited using the reactive gases GeH4 and SiH2Cl2 in a hydrogen carrier gas. The depositions were performed at a total pressure of 2.5 Torr and at temperatures...

  • Synthesis and characterization of epitaxial YBa[sub 2]Cu[sub 3]O[sub7-delta]/KNbO[sub 3].... Soble II, C.N.; Rou, S.H. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1844 

    Examines the deposition of YBa[sub 2]Cu[sub 3]O[sub 7-delta]/KNbO[sub 3] thin-film bilayers on magnesium oxide through ion-beam sputter-deposition technique. Evidence for epitaxial growth of the films; Lack of potassium diffusion into the films or substrate; Existence of thin reaction layer at...

  • Deposition of boron-nitride films by nitrogen sputtering from a boron-metal target. Jensen, H.; Jensen, U.M. // Applied Physics Letters;3/20/1995, Vol. 66 Issue 12, p1489 

    Focuses on the reactive growth of boron-nitride films by a rf nitrogen-sputtering process from a boron-metal target. Description of the metastable cubic boron nitride; Functions of nitrogen in the deposition; Measurement of sputter rates.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics