Temperature and intensity dependence of the saturated density of light-induced defects in

Hata, N.; Isomura, M.
March 1992
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1462
Academic Journal
Compares experimental data for the saturated light-induced defect density (N[sub sat]) in hydrogenated amorphous silicon with results obtained by a quasi-equilibrium model. Reproduction of N[sub sat] regimes; Dependence of the defect density on generation-rate and temperature; Inapplicability of using the assumption of valence-band-tail states as source of defects.


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