Raman study of low growth temperature GaAs

Gant, T.A.; Shen, H.
March 1992
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1453
Academic Journal
Investigates the use of Raman spectroscopy to characterize gallium arsenide grown by molecular-beam epitaxy at low temperature. Measurement of the epilayer by x-ray diffraction; Significance of the frequency shift of the longitudinal optics phonon in the reduction of the electric field; Similarity of the lattice constant between epilayer and the substrate.


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