TITLE

Raman study of low growth temperature GaAs

AUTHOR(S)
Gant, T.A.; Shen, H.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1453
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the use of Raman spectroscopy to characterize gallium arsenide grown by molecular-beam epitaxy at low temperature. Measurement of the epilayer by x-ray diffraction; Significance of the frequency shift of the longitudinal optics phonon in the reduction of the electric field; Similarity of the lattice constant between epilayer and the substrate.
ACCESSION #
4241140

 

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