TITLE

High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates

AUTHOR(S)
Venkatasubramanian, R.; Timmons, M.L.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p886
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes an approach to attain high quality gallium arsenide-aluminum gallium arsenide (GaAs-AlGaAs) thin film heterostructures on silicon using eutectic-metal-bonding. Involvement of the lattice-matched growth of thin films on germanium substrates; Presentation of room-temperature photoluminescence characteristics; Measurement of residual elastic strain.
ACCESSION #
4241119

 

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