Photoluminescence and structure properties of GaAs/ZnSe quantum wells

Zhang, S.; Kobayashi, N.
February 1992
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p883
Academic Journal
Examines the quantum size effect in photoluminescence (PL) of zinc selenide (ZnSe)/gallium arsenide (GaAs)/ZnSe quantum wells by improving the quality of GaAs well layer on ZnSe barrier. Implementation of migration-enhanced epitaxy of GaAs well layer; Changes to higher energies of PL spectra; Determination of valence-band discontinuities.


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