Characterization of ZnSe/GaAs heterostructure using transverse acoustoelectric voltage

Han, K.J.; Abbate, A.
February 1992
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p862
Academic Journal
Characterizes zinc selenide/gallium arsenide heterostructure samples using transverse acoustoelectric voltage (TAV) spectroscopy. Evaluation of the interface band and impurity transitions of heterostructures; Manifestation of a conduction band offset from TAV spectrum; Difference of TAV waveform spectral behavior for single and double beam cases.


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