New theory of linewidths of radiative transitions due to disordering in semiconductor alloys

Lee, S.M.; Bajaj, K.K.
February 1992
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p853
Academic Journal
Describes a quantum mechanical formalism of the excitonic linewidth due to alloy disordering. Application of the formalism to aluminum gallium arsenide semiconductor alloys; Use of the first-order perturbation theory in the calculations; Presentation of excitonic linewidth in Al[sub x]Ga[sub 1-x]As alloy.


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