TITLE

Nanofeatures on GaAs (111)B via photolithography

AUTHOR(S)
Rajkumar, K.C.; Kaviani, K.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p850
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates wet chemical etching of gallium arsenide substrates with square resist pattern defined by photolithography yields triangular truncated pyramidal mesas. Presentation of areal dimensions of unetched tops of pyramidal mesas; Use of transmission electron microscopy to examine a multilayer structure; Presence of a confined gallium arsenide volume.
ACCESSION #
4241106

 

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