TITLE

Annealing effect on the carrier concentration in heavily C-doped p[sup +]-AlGaAs

AUTHOR(S)
Watanabe, Kazuo; Yamazaki, Hajime
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p847
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the annealing on carrier concentration effects of heavily carbon-doped aluminum gallium arsenide layers grown by metalorganic chemical vapor deposition. Relation between carrier concentration and hydrogen atoms; Deactivation of carbon by the hydrogen atoms; Influence of changes in the occupation site preference of carbon on the carrier.
ACCESSION #
4241105

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics