TITLE

Low-defect-density germanium on silicon obtained by a novel growth phenomenon

AUTHOR(S)
Malta, D.P.; Posthill, J.B.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p844
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of heteroepitaxial germanium on silicon using molecular beam epitaxy. Indication on the localized germanium melting and subsequent silicon local alloying; Creation of dense and confined threading dislocation network; Manifestation of etch pit density measurement.
ACCESSION #
4241104

 

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