TITLE

Growth of strained InAs/InP quantum wells by molecular beam epitaxy

AUTHOR(S)
Hopkinson, M.; David, J.P.R.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p841
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the growth of indium arsenide/indium phosphide quantum wells by solid source molecular beam epitaxy. Manifestation of photoluminescence spectra on emission lines; Occurrence of a strong photoluminescence emission; Demonstration on the high quality pseudomorphic structures by transmission electron microscopy studies.
ACCESSION #
4241103

 

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