TITLE

Atomic-scale morphology and interfaces of epitaxially embedded metal (CoAl)/semiconductor

AUTHOR(S)
Tanaka, M.; Ikarashi, N.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p835
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the atomic-scale morphology and interfaces of epitaxially embedded metal/semiconductor heterostructures. Influence of the gallium arsenide growth temperature on the buried metallic cobalt aluminide (CoAl) film; Implication of the low resistivity of the interface for the electrically continuous metallic film; Fabrication of CoAl dots through agglomeration.
ACCESSION #
4241101

 

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