TITLE

Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source

AUTHOR(S)
Yoshinobu, Tatsuo; Mitsui, Hideaki
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p824
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the lattice-matched epitaxial growth of 3carbon-silicon carbide (SiC) on 6hydrogen-SiC substrates using alternate gas molecular beams of disilane and acetylene. Characterization of polytype and crystallinity of grown layers; Significance of low temperature for single crystalline 3C-SiC layers; Obtainment of 6H-SiC substrates at low temperatures.
ACCESSION #
4241097

 

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