Development and application of a microbeam plasma generator

Koinuma, Hideomi; Ohkubo, Hiroyuki
February 1992
Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p816
Academic Journal
Develops a plasma generator for the production of a stable plasma beam. Significance of microbeam plasma in etching; Construction of a wide-area treatment plasma generator; Presentation of emission analysis of the etching plasma.


Related Articles

  • A comparison of HDP sources for polysilicon etching. Lee, J.T.C. // Solid State Technology;Aug96, Vol. 39 Issue 8, p63 

    Evaluates three commercially available high-density plasma sources for 0.35-um polysilicon gate etch. Helicon sources; Helical resonator; Multipole electron cyclotron resonance source; Need for low-pressure high-density plasma sources for ultralarge-scale integration etching; Optimum etching...

  • Aspect-ratio-dependent charging in high-density plasmas. Hwang, Gyeong S.; Giapis, Konstantinos P. // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p566 

    Studies by Monte Carlo simulations the effect of aspect ratio on charge buildup in trenches during plasma etching of polysilicon-on-insulator structures. Description of plasma conditions and microstructure; Simulation of microstructure charging; Simulation of sidewall profile evolution.

  • Advanced MERIE technology for high-volume 0.25-microm generation critical dielectric etch. Lindley, Roger; Bjorkman, Claes // Solid State Technology;Aug97, Vol. 40 Issue 8, p93 

    Discusses three areas of magnetically enhanced reactive ion etcher development that extend process capabilities for high-volume, critical 0.25-um generation dielectric etch. Magnetic field configuration; Process chemistry; Chamber hardware design; Components of high-selectivity chemistry;...

  • Etch microloading creates damaging `latent antenna effect'. E.K. // Solid State Technology;Jul97, Vol. 40 Issue 7, p74 

    Discusses latent antenna effect which causes gateoxide damage to plasma etching, presented by Kobe Steel Ltd., Texas Instruments and Stanford University at the Plasma Process-Induced Damage Symposium in Monterey, California. Mechanics of the latent antenna charging effect; Scope of damage caused.

  • Plasma etch waste poses health hazard, says report.  // Solid State Technology;Dec95, Vol. 38 Issue 12, p38 

    Presents information on the Second International Symposium on the Environmental Impact of Microelectronics Device Fabrication. Report on possible health dangers associated with fab line plasma processes; Genotoxic effects; Need for further experiments; More.

  • Plasma etching system.  // Solid State Technology;Jun2008, Vol. 51 Issue 6, p49 

    The article evaluates the PE-100 plasma etching system from Plasma Etch Inc.

  • Detection of Cl and chlorine-containing negative ions in rf plasmas by two-photon laser-induced fluorescence. Selwyn, Gary S.; Baston, L. D.; Sawin, H. H. // Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p898 

    Chlorine atoms have been detected in rf etching plasmas of CClF3 and CCl2F2 with three-dimensional spatial resolution using a two-photon laser-induced fluorescence technique. The spin-forbidden 4p(4S0)–3p(2P0) transition is pumped by absorption of two 233.3-nm laser photons. Decay of the...

  • Time-of-flight study on the thermal etching of Al with Cl2. Janssen, R. J. A. A.; Kolfschoten, A. W.; van Veen, G. N. A. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p98 

    A pseudorandom cross-correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time-of-flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating...

  • Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces. Oehrlein, Gottlieb S.; Scilla, Gerald J.; Jeng, Shwu-Jen // Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p907 

    It is demonstrated with the use of in situ x-ray photoemission spectroscopy, secondary ion mass spectrometry, and transmission electron microscopy, that the commonly practiced in situ oxygen plasma/hydrofluoric acid dip treatment of reactive ion damaged silicon surfaces is insufficient in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics