TITLE

Electronic properties of InGaP grown by solid-source molecular-beam epitaxy with a GaP

AUTHOR(S)
Shitara, Tomoya; Eberl, Karl
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p356
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electronic properties of indium gallium phosphide (InGaP) lattice grown by solid-source molecular beam epitaxy. Production of dimer phosphorus molecular beam from GaP decomposition source; Observation of photoluminescence linewidth at ten Kelvin; Analysis of the P[sub 2]/P[sub 4] ratio by quadruple mass spectrometer.
ACCESSION #
4240980

 

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