Reduction of zinc diffusion into the collector of InP-based double heterojunction bipolar

Bhat, R.; Koza, M.A.
July 1994
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p338
Academic Journal
Examines the effect of emitter layers of indium phosphide (InP)-based double heterojunction bipolar transistors (DHBT) on zinc diffusion. Growth of DHBT by organometallic chemical vapor deposition; Dependence of zinc diffusion on the n-doping level of emitter; Introduction of AlInAs between the n-InP emitter and p[sup +]-InGaAs base.


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