TITLE

Reduction of zinc diffusion into the collector of InP-based double heterojunction bipolar

AUTHOR(S)
Bhat, R.; Koza, M.A.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p338
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of emitter layers of indium phosphide (InP)-based double heterojunction bipolar transistors (DHBT) on zinc diffusion. Growth of DHBT by organometallic chemical vapor deposition; Dependence of zinc diffusion on the n-doping level of emitter; Introduction of AlInAs between the n-InP emitter and p[sup +]-InGaAs base.
ACCESSION #
4240974

 

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