TITLE

Influence of cap layer thickness on optical quality in In[sub 0.2] Ga[sub 0.8]As/GaAs single

AUTHOR(S)
Wang, S.M.; Thordson, J.V.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p336
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the influence of cap layer thickness on optical quality in In[sub 0.2]Ga[sub 0.8]As/gallium arsenide single quantum wells by photoluminescence and photoreflectance. Correlation between residual strain and cap layer thickness; Indication of narrow linewidth and high luminescence efficiency; Absence of Stokes shift in the transition energies.
ACCESSION #
4240973

 

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