Intensity variation of photoluminescence in In[sub x]Ga[sub 1-x]As/GaAs multi-quantum-well

Piao, Z.S.; Jeon, H.I.
July 1994
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p333
Academic Journal
Examines the influence of sample structure on the photoluminescence (PL) intensity in In[sub x]Ga[sub 1-x]As/gallium arsenide multi-quantum-well structures. Relationship between well thickness and excitation energy; Importance of carrier transport between wells for PL; Dependence of hopping time on well composition and width.


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