Kinetics of hydrogen interaction with SiO[sub 2]-Si interface trap centers

Khatri, R.; Asoka-Kumar, P.
July 1994
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p330
Academic Journal
Examines the effects of low temperature annealing on the thermal dissociation of hydrogen (H)-passivated interface trap centers of SiO[sub 2]-silicon (Si) system. Use of positron annihilation spectroscopy; Dissociation of Si-H bonds through energy activation; Creation of trap centers at 600 degree Centigrade.


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