TITLE

Misfit dislocation propagation kinetics in Ge[sub x]Si[sub 1-x]/Ge(100) heterostructures

AUTHOR(S)
Hull, R.; Bean, J.C.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p327
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the misfit dislocation propagation kinetics in Ge[sub x]Si[sub 1-x]/Ge(100) heterostructures. Comparison with previous measurement of germanium (Ge) concentration layer in silicon (Si)(100) substrates; Characterization of the misfit dislocation velocity; Interpolation between the bulk values for Si and Ge.
ACCESSION #
4240970

 

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