Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy

Stevens, K.S.; Ohtani, A.
July 1994
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p321
Academic Journal
Examines the microstructure of aluminum nitride (AlN) on silicon (Si) (111) substrate grown by plasma-assisted molecular beam epitaxy. Use of x-ray diffraction to show the mosaic-type disorder; Decrease in AlN[0001] and Si[111] angles; Relationship between substrate temperature and peak width.


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