TITLE

Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy

AUTHOR(S)
Stevens, K.S.; Ohtani, A.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p321
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the microstructure of aluminum nitride (AlN) on silicon (Si) (111) substrate grown by plasma-assisted molecular beam epitaxy. Use of x-ray diffraction to show the mosaic-type disorder; Decrease in AlN[0001] and Si[111] angles; Relationship between substrate temperature and peak width.
ACCESSION #
4240968

 

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