1/f noise and electromigration in aluminum films: The role of film microstructure and texture

Smith, R.G.; Biery, G.A.
July 1994
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p315
Academic Journal
Examines the role of crystallographic texture for the 1/f noise and electromigration of aluminum (Al) films. Measurement of the noise magnitude and logarithmic slope of Al films; Relationship between electromagnetic lifetime and volume fraction; Implication of grain boundaries as the major source of noise in Al films.


Related Articles

  • Experimental study of electromigration in bicrystal aluminum lines. Longworth, Hai P.; Thompson, C.V. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2219 

    Examines an approach for electromigration in aluminum lines with controlled, single, identical grain boundaries. Distribution of the failure times of the crystal lines; Dependence of median time to failure on the boundary orientations; Contribution of interfacial and grain boundary diffusion...

  • Slit morphology of electromigration induced open circuit failures in fine line conductors. Sanchez, John E.; McKnelly, L. T.; Morris, J. W. // Journal of Applied Physics;10/1/1992, Vol. 72 Issue 7, p3201 

    Discusses the detailed transmission and scanning electron microscope images of electromigration-induced open circuit failures for fine line aluminum alloy thin film interconnects. Result of constant current testing of unpassivated single line conductors; Information on the electromigration...

  • Texture analysis of Al/SiO2 films deposited by a partially ionized beam. Knorr, D. B.; Lu, T.-M. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2210 

    The preferred crystallographic orientation, or texture, of aluminum films deposited on oxidized silicon by evaporation and by partially ionized beam (PIB) deposition is studied. Texture is quantified by the x-ray diffraction pole figure technique. The pole figures reveal important details of the...

  • Electromigration behavior of ionized cluster beam deposited aluminum films on SiO2. Hummel, R. E.; Yamada, I. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1765 

    Unpassivated, pure aluminum films on 7000-Å-thick SiO2 were prepared by ionized cluster beam deposition in a vacuum of 2×10-6 Torr from a carbon crucible which had a nozzle of 2 mm diameter. The resulting particle beam was ionized by impact of electrons and accelerated by an electrical...

  • Noise measurements in thin-film interconnections: A nondestructive technique to characterize electromigration. Bagnoli, P. E.; Diligenti, A.; Neri, B.; Ciucci, S. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1448 

    Presents a study which conducted noise measurements to examine the electromigration in aluminum thin film interteconnections. Description of the measuring apparatus; Methodology; Results.

  • Fatal electromigration voids in narrow aluminum-copper interconnect. Rose, J.H. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2170 

    Examines the shape and crystallography of fatal electromigration void in near-bamboo aluminum-2 wt % copper thin-film conductors using transmission electron microscopy. Shapes of the fatal voids; Direction of the void formation; Inclination of void faces in grains of varying surface...

  • Crystallography and electromigration resistance of epitaxial Al films grown on (011)Si.... Niwa, H.; Teramae, Satoshi // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p203 

    Investigates the crystallography and electromigration resistance of aluminum films sputtered on (011)silicon substrates. Use of transmission electron microscopy; Effect of temperature and film thickness on crystallography; Formation of film grains during deposition.

  • Activation energy and prefactor for surface electromigration and void drift in Cu interconnects. Choi, Z.-S.; Mönig, R.; Thompson, C. V. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p083509 

    Surface electromigration rates on oxide-free surfaces of unpassivated damascene Cu interconnect segments have been determined through electromigration testing under vacuum. Electromigration-induced voids grew at the cathode end of the segments due to a flux divergence at refractory-metal-lined...

  • Electromigration-induced grain rotation in anisotropic conducting beta tin. Wu, Albert T.; Gusak, A. M.; Tu, K. N.; Kao, C. R. // Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241902 

    Electromigration in beta-Sn has shown a 10% drop of resistance due to the anisotropic properties of the material. The drop was proposed due to reorientation of grains to reduce the resistance. The driving force as well as the atomic mechanism of grain rotation under electromigration has been...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics